|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Power Transistors 2SD2133 Silicon NPN epitaxial planar type For low-frequency power amplification driver 7.50.2 Unit: mm 4.50.2 * Low collector-emitter saturation voltage VCE(sat) 10.80.2 0.650.1 16.01.0 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 5 1 1.5 1.5 150 -55 to +150 Unit V V V A A W C C 2.50.1 0.850.1 1.00.1 0.8 C 90 Features 3.80.2 0.8 C 0.70.1 0.70.1 1.150.2 1.150.2 0.50.1 0.8 C 1 2 3 2.050.2 0.40.1 2.50.2 2.50.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package Electrical Characteristics TC = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO hFE1 *1, 2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) *1 Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IC = 0.5 A VCE = 5 V, IC = 1 A VCE = 10 V, IC = 1 mA IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz Min 60 50 5 Typ Max Unit V V V A 0.1 85 50 35 0.2 0.85 200 11 0.4 1.20 100 340 hFE3 VCE(sat) VBE(sat) fT Cob V V MHz pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340 Publication date: May 2003 SJD00244BED 1 2SD2133 PC Ta 2.0 Without heat sink IC VCE 1.2 Ta=25C IB=10mA 9mA 1.0 8mA 7mA 6mA IC I B 1.2 VCE=10V Ta=25C Collector power dissipation PC (W) 1.0 1.6 Collector current IC (A) 0.8 5mA 4mA Collector current IC (A) 0.8 1.2 0.6 3mA 0.6 0.8 0.4 0.4 2mA 0.4 0.2 1mA 0.2 0 0 40 80 120 160 0 0 0 2 4 6 8 10 12 0 2 4 6 8 10 12 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base current IB (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 10 VBE(sat) IC Base-emitter saturation voltage VBE(sat) (V) IC/IB=10 hFE IC IC/IB=10 100 300 VCE=10V 1 10 Forward current transfer ratio hFE 250 200 Ta=75C Ta=25C 10-1 Ta=75C Ta=25C Ta=-25C 1 Ta=-25C Ta=75C Ta=25C 150 Ta=-25C 100 10-2 0.1 50 10-3 0.01 1 10 100 1 000 1 10 100 1 000 0 1 10 100 1 000 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) fT I E Collector output capacitance C (pF) (Common base, input open circuited) ob 200 VCB=10V f=200MHz TC=25C Cob VCB 30 100 VCER RBE Collector-emitter voltage (V) (Resistor between B and E) VCER IE=0 f=1MHz Ta=25C IC=10mA TC=25C Transition frequency fT (MHz) 160 25 80 20 120 60 15 80 40 10 40 20 5 0 -1 -10 -100 0 1 10 100 0 0.1 1 10 100 Emitter current IE (A) Collector-base voltage VCB (V) Base-emitter resistance RBE (k) 2 SJD00244BED 2SD2133 ICBO Ta 104 VCE=10V Safe operation area 10 Single pulse TC=25C ICP Collector current IC (A) 103 1 IC ICBO (Ta) ICBO (Ta = 25C) t=10ms 102 10-1 DC 10 10-2 1 0 40 80 120 160 10-3 0.1 1 10 100 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Rth t 104 Without heat sink Thermal resistance Rth (C/W) 103 102 10 1 10-1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) SJD00244BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
Price & Availability of 2SD2133 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |